Non-linear modeling, analysis, design and simulation of a solid state power amplifier based on GaN technology for Ku band microwave application

A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear gain of 22.9 dB was reached.THE use of solid state power amplifiers (SSPAs) in manyradio communication systems, such as Ku band satellite communication systems, mobile cellular phone systems,etc, has increased significantly in recently years. The SSPAs higher reliability, smaller size, and enhanced performance have resulted in an increased popularity over its traveling wave tube amplifier (TWTA) counterparts